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 (R)
STPS1045D/F
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP INSULATED PACKAGE:ISOWATT220AC Insulating voltage = 2000V DC Capacitance = 12pF 10 A 45 V 0.57 V
K
A
A K
A K
TO-220AC STPS1045D
ISOWATT220AC STPS1045F
DESCRIPTION Single chip Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current = 0.5 TO-220AC ISOWATT220AC Tc = 150C Tc = 145C tp = 10 ms Sinusoidal tp = 2 s F = 1KHz 180 1 - 65 to + 175 175 10000 A A C C V/s
1/5
Value 45 30 10
Unit V A A
IFSM IRRM Tstg Tj dV/dt
Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage
September 1999 - Ed: 3B
STPS1045D/F
THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case TO-220AC ISOWATT220AC STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25C Tj = 125C VF ** Forward voltage drop Tj = 25C Tj = 125C Tj = 125C
Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2%
Value 2.2 4.5
Unit C/W
Min.
Typ.
Max. 100 15
Unit A mA V
VR = VRRM
IF = 15 A IF = 15 A IF = 7.5 A
0.84 0.72 0.57
To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.015 IF2(RMS)
Fig. 1: Average forward power dissipation versus average forward current.
Fig. 2: Average current versus ambient temperature ( : 0.5).
PF(av)(W) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 IF(av) (A) 5 6 7 8 9
=tp/T
T
IF(av)(A)
= 0.05 = 0.1 = 0.2 = 0.5
12
Rth(j-a)=Rth(j-c)
10
=1
TO220AC
8 6 4 2
T
Rth(j-a)=15C/W
ISOWATT220
tp
10
11
12
0
=tp/T
tp
Tamb(C) 50 75 100 125 150 175
0
25
2/5
STPS1045D/F
Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC). Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (ISOWATT220AC).
IM(A) 160 140 120 100 80 60 40 20 0 1E-3
IM t
Tc=50C Tc=100C
Tc=150C
=0.5
t(s) 1E-2 1E-1 1E+0
IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3
Tc=50C
Tc=100C
Tc=150C
t
=0.5
t(s) 1E-2 1E-1 1E+0
Fig. 4-1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AC).
Fig. 4-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AC).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2
= 0.5
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4
T
= 0.5
= 0.2 = 0.1
= 0.2 = 0.1
T
0.2
tp(s) 1E-3 1E-2
=tp/T
tp
0.0 1E-4
Single pulse
1E-1
1E+0
0.0 1E-3
Single pulse
tp(s) 1E-2 1E-1
=tp/T
tp
1E+0
1E+1
Fig. 5: Reverse leakage current versus reverse voltage applied (typical values).
Fig. 6: Junction capacitance versus reverse voltage applied (typical values).
IR(A) 1E+5 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 0 5 10 15
Tj=150C
C(pF) 1000
F=1MHz Tj=25C
Tj=125C Tj=100C Tj=75C Tj=50C Tj=25C
500
200 VR(V)
30 35 40 45
VR(V) 20 25
100
1
2
5
10
20
50
3/5
STPS1045D/F
Fig. 7: Forward voltage drop versus forward current (maximum values).
IFM(A) 100.0
Tj=125C (Typical values)
10.0
Tj=125C
Tj=25C
1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF.
H2 C L5 OI L6 L2 D L7 A
Millimeters Min. Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 14.00 2.95 15.75 6.60 3.93 3.85 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 13.00 2.65 15.25 6.20 3.50 3.75
Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 0.551 0.116 0.620 0.259 0.154 0.151
A C D E F F1 G H2 L2
L9 F1 L4
16.40 typ.
0.645 typ.
F G
M E
L4 L5 L6 L7 L9 M Diam. I
2.6 typ.
0.102 typ.
4/5
STPS1045D/F
PACKAGE MECHANICAL DATA ISOWATT220AC
A H B
DIMENSIONS REF. A B D
L7
Millimeters Min. Typ. Max. 4.60 2.70 2.75 0.70 1.00 1.70 5.20 16.00 28.60 15.90 9.00 3.00 30.60 1.125 16.40 0.626 9.30 3.20 0.354 0.118 Min. 0.173 0.098 0.094 0.016 0.030 0.045 0.195 4.40 2.50 2.40 0.40 0.75 1.15 4.95 10.00
Inches Typ. Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.205 0.409 0.630 1.205 0.646 0.366 0.0126
L6 L2 L3
Diam
E F F1 G H L2 L3 L6
F1
10.40 0.394
F G
D
E
L7 Diam
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5


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